v 20130925 2 N 38400 41000 49500 41000 4 C 38800 40700 1 0 0 gnd-1.sym N 38400 50000 49500 50000 4 N 44000 48500 44300 48500 4 N 45000 47900 45000 43100 4 { T 44900 45300 5 10 1 1 90 0 1 netname=emitters } N 45000 49100 45000 50000 4 N 45000 41000 45000 41900 4 N 43000 45500 44000 45500 4 { T 43300 45300 5 10 1 1 0 0 1 netname=pwm } N 44000 42200 44000 48800 4 { T 44200 45800 5 10 1 1 90 0 1 netname=bases } C 38700 50000 1 0 0 5V-plus-1.sym { T 38700 50000 5 10 0 0 0 0 1 netname=+5v } N 44000 42500 44300 42500 4 N 43000 43600 43000 47400 4 C 44100 48800 1 90 0 resistor-2.sym { T 43750 49200 5 10 0 0 90 0 1 device=RESISTOR T 43800 49300 5 10 1 1 0 6 1 refdes=R2 T 43800 49200 5 10 1 1 180 0 1 value=4.7k } N 44000 49700 44000 50000 4 C 44100 41300 1 90 0 resistor-2.sym { T 43750 41700 5 10 0 0 90 0 1 device=RESISTOR T 43800 41800 5 10 1 1 0 6 1 refdes=R3 T 43800 41700 5 10 1 1 180 0 1 value=4.7k } N 44000 41000 44000 41300 4 N 40000 48000 40800 48000 4 { T 40200 47800 5 10 1 1 0 0 1 netname=q3in } N 43000 48600 43000 50000 4 C 39700 41600 1 0 0 vpulse-1.sym { T 40400 42250 5 10 1 1 0 0 1 refdes=V3 T 40400 42450 5 10 0 0 0 0 1 device=vpulse T 40400 42650 5 10 0 0 0 0 1 footprint=none T 39750 41100 5 10 1 1 90 0 1 value=pulse 0 5v 5u 1n 1n 2u 20u } N 40000 41600 40000 41000 4 N 40000 43000 40800 43000 4 { T 40100 43100 5 10 1 1 0 0 1 netname=v3out } N 43000 42400 43000 41000 4 N 40000 48400 40000 48000 4 N 40000 49600 40000 50000 4 C 39700 48400 1 0 0 vpulse-1.sym { T 40400 49050 5 10 1 1 0 0 1 refdes=V2 T 40400 49250 5 10 0 0 0 0 1 device=vpulse T 40400 49450 5 10 0 0 0 0 1 footprint=none T 39750 47800 5 10 1 1 90 0 1 value=pulse 0 5v 0u 1n 1n 2u 20u } N 40000 42800 40000 43000 4 C 38600 46000 1 0 0 vdc-1.sym { T 39300 46650 5 10 1 1 0 0 1 refdes=V4 T 39300 46850 5 10 0 0 0 0 1 device=VOLTAGE_SOURCE T 39300 47050 5 10 0 0 0 0 1 footprint=none T 39300 46450 5 10 1 1 0 0 1 value=DC 5V } N 38900 47200 38900 50000 4 N 38900 46000 38900 41000 4 C 41200 41000 1 180 1 pmos-3.sym { T 41800 40500 5 10 0 0 180 6 1 device=PMOS_TRANSISTOR T 41800 40400 5 10 1 1 180 6 1 refdes=Q13 T 41700 40800 5 10 1 1 180 6 1 model-name=TP0610 T 41200 41000 5 10 0 0 180 6 1 model=LEVEL=3 TOX=7E-8 RS=100E-2 RD=0 NSUB=8.2E16 KP=9E-6 UO=400 VMAX=0 XJ=5E-7 KAPPA=1E-1 ETA=1E-4 TPG=-1 IS=0 LD=0 CGSO=0 CGDO=0 CGBO=0 NFS=0.8E12 DELTA=0.1 } C 39800 40200 1 0 0 nmos-3.sym { T 40400 40700 5 10 0 0 0 0 1 device=NMOS_TRANSISTOR T 40500 40800 5 10 1 1 0 0 1 refdes=Q14 T 39800 40200 5 10 0 0 0 0 1 model=Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0 Tox=2u Uo=600 Phi=.6 Kp=1.073u W=.12 L=2u Rs=20m Vto=1.73 Rd=.5489 Rds=48MEG Cgso=73.61p Cgdo=6.487p Cbd=74.46p Mj=.5 Pb=.8 Fc=.5 Rg=546.2 Is=10f N=1 Rb=1m T 40500 40400 5 10 1 1 0 0 1 model-name=2N7000 } C 41700 48100 1 180 0 resistor-2.sym { T 41300 47750 5 10 0 0 180 0 1 device=RESISTOR T 41000 48200 5 10 1 1 0 0 1 refdes=R5 T 41000 47800 5 10 1 1 180 6 1 value=4.7k } N 41700 48000 42300 48000 4 C 41900 49700 1 270 0 resistor-2.sym { T 42250 49300 5 10 0 0 270 0 1 device=RESISTOR T 41800 49400 5 10 1 1 0 6 1 refdes=R6 T 41800 49000 5 10 1 1 180 0 1 value=1k } N 42000 49700 42000 50000 4 N 42000 48800 42000 48000 4 C 41700 43100 1 180 0 resistor-2.sym { T 41300 42750 5 10 0 0 180 0 1 device=RESISTOR T 41000 43200 5 10 1 1 0 0 1 refdes=R7 T 41000 42800 5 10 1 1 180 6 1 value=4.7k } C 41900 42200 1 270 0 resistor-2.sym { T 42250 41800 5 10 0 0 270 0 1 device=RESISTOR T 41800 41900 5 10 1 1 0 6 1 refdes=R8 T 41800 41400 5 10 1 1 180 0 1 value=1k } N 41700 43000 42300 43000 4 N 42000 42200 42000 43000 4 N 42000 41300 42000 41000 4 N 45000 45500 46500 45500 4 C 43200 41000 1 270 0 diode-1.sym { T 43800 40600 5 10 0 1 270 0 1 device=DIODE T 43200 40700 5 10 1 1 0 6 1 refdes=D100 T 43200 40200 5 10 1 1 0 6 1 model-name=1N4148 T 43200 41000 5 10 0 0 270 0 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } C 46500 47100 1 180 1 diode-1.sym { T 46900 46500 5 10 0 1 0 2 1 device=DIODE T 46700 46800 5 10 1 1 180 0 1 refdes=D3 T 47100 47100 5 10 0 1 90 0 1 model-name=1N4148 T 46500 47100 5 10 0 0 0 2 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } C 46500 48000 1 180 0 diode-1.sym { T 46100 47400 5 10 0 1 0 8 1 device=DIODE T 46500 47500 5 10 1 1 180 2 1 refdes=D2 T 45900 48000 5 10 0 1 90 2 1 model-name=1N4148 T 46500 48000 5 10 0 0 0 8 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } C 45800 47800 1 90 1 diode-1.sym { T 45200 47400 5 10 0 1 270 2 1 device=DIODE T 45800 47400 5 10 1 1 0 0 1 refdes=D1 T 45800 47200 5 10 0 1 0 0 1 model-name=1N4148 T 45800 47800 5 10 0 0 270 2 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } C 45600 46700 1 0 0 diode-1.sym { T 46000 47300 5 10 0 1 180 8 1 device=DIODE T 45600 46800 5 10 1 1 0 2 1 refdes=D4 T 46200 46700 5 10 0 1 270 2 1 model-name=1N4148 T 45600 46700 5 10 0 0 180 8 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } C 46600 41300 1 90 0 resistor-2.sym { T 46250 41700 5 10 0 0 90 0 1 device=RESISTOR T 46300 41800 5 10 1 1 0 6 1 refdes=R9 T 46300 41700 5 10 1 1 180 0 1 value=1k } N 46500 43200 46500 42200 4 { T 46300 42100 5 10 1 1 90 0 1 netname=lowbase } N 46500 41300 46500 41000 4 C 46600 48800 1 90 0 resistor-2.sym { T 46250 49200 5 10 0 0 90 0 1 device=RESISTOR T 46300 49300 5 10 1 1 0 6 1 refdes=R10 T 46300 49200 5 10 1 1 180 0 1 value=1k } N 46500 47800 46500 48800 4 { T 46300 48100 5 10 1 1 90 0 1 netname=highbase } C 47300 47900 1 0 0 transistor-pnp.sym { T 48300 48700 5 8 0 1 0 0 1 device=PNP_TRANSISTOR T 48300 48500 5 10 1 1 0 0 1 refdes=Q5 T 48300 48800 5 8 0 1 0 0 1 footprint=TO92 T 48300 48300 5 10 1 1 180 6 1 model-name=BC557B T 47300 47900 5 10 0 1 0 0 1 model=IS=1.68077e-12 BF=3385 NF=1.2121 VAF=196.745 IKF=1.30809 ISE=1.76095e-13 NE=1.56412 BR=99.5231 NR=1.23271 VAR=0.978236 IKR=10 ISC=1.76095e-13 NC=1.21727 RB=17.2944 IRB=0.1 RBM=0.1 RE=0.354597 RC=1.77298 XTB=0.100946 XTI=1 EG=1.05 CJE=1.13417e-11 VJE=0.654776 MJE=0.23 TF=5.99604e-10 XTF=1000 VTF=3935.03 ITF=31.8969 CJC=9.54039e-12 VJC=0.4 MJC=0.408114 XCJC=0.910091 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 47300 41900 1 0 0 transistor.sym { T 48300 42700 5 8 0 0 0 0 1 device=NPN_TRANSISTOR T 48300 42500 5 10 1 1 0 0 1 refdes=Q6 T 48300 42800 5 8 0 2 0 0 1 footprint=TO92 T 48300 42400 5 10 1 1 180 6 1 model-name=BC547B T 47300 41900 5 10 0 0 0 0 1 model=IS=7.443e-11 BF=1343.59 NF=1.42606 VAF=80.4901 IKF=0.427163 ISE=2.4623e-10 NE=2.73946 BR=62.79 NR=1.5 VAR=1.0092 IKR=4.27163 ISC=2.4623e-10 NC=1.9119 RB=0.1 IRB=0.1 RBM=0.1 RE=0.579065 RC=3.01102 XTB=0.1 XTI=2.25359 EG=1.05 CJE=7.34106e-12 VJE=0.586136 MJE=0.33309 TF=5.7202e-10 XTF=4.45797 VTF=26.03 ITF=0.487193 CJC=4.04665e-12 VJC=0.95 MJC=0.343664 XCJC=0.799994 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } N 46500 48500 47300 48500 4 N 48000 49100 48000 50000 4 N 47300 42500 46500 42500 4 N 48000 41900 48000 41000 4 N 48000 47900 48000 47700 4 { T 48000 45400 5 10 1 1 90 0 1 netname=highemitter } N 48000 46000 48000 46800 4 C 47900 46800 1 270 1 resistor-2.sym { T 48250 47200 5 10 0 0 90 2 1 device=RESISTOR T 48200 47300 5 10 1 1 0 0 1 refdes=R11 T 48200 47200 5 10 1 1 180 6 1 value=4.7k } C 47900 43300 1 270 1 resistor-2.sym { T 48250 43700 5 10 0 0 90 2 1 device=RESISTOR T 48200 43800 5 10 1 1 0 0 1 refdes=R12 T 48200 43700 5 10 1 1 180 6 1 value=4.7k } N 48000 43300 48000 43100 4 { T 48000 44300 5 10 1 1 90 0 1 netname=lowemitter } N 48000 45000 49000 46000 4 N 48000 46000 49000 45000 4 N 49000 46000 49000 50000 4 N 49000 45000 49000 41000 4 N 48000 44200 48000 45000 4 N 46500 49700 46500 50000 4 C 46500 44300 1 180 1 diode-1.sym { T 46900 43700 5 10 0 1 0 2 1 device=DIODE T 46500 44300 5 10 0 0 0 2 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 46800 44300 5 10 1 1 180 0 1 refdes=D8 T 47100 44300 5 10 0 1 90 0 1 model-name=1N4148 } N 46500 46000 46500 45000 4 C 47200 44100 1 270 0 diode-1.sym { T 47800 43700 5 10 0 1 270 0 1 device=DIODE T 47200 44100 5 10 0 0 270 0 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 47200 43700 5 10 1 1 0 6 1 refdes=D9 T 47200 43500 5 10 0 1 0 6 1 model-name=1N4148 } C 47400 43000 1 0 1 diode-1.sym { T 47000 43600 5 10 0 1 180 2 1 device=DIODE T 47400 43000 5 10 0 0 180 2 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 46600 43400 5 10 1 1 0 0 1 refdes=D10 T 46800 43000 5 10 0 1 270 0 1 model-name=1N4148 } C 44400 39800 1 0 0 transistor.sym { T 45400 40600 5 8 0 0 0 0 1 device=NPN_TRANSISTOR T 45400 40400 5 10 1 1 0 0 1 refdes=Q600 T 45400 40700 5 8 0 2 0 0 1 footprint=TO92 T 45400 40300 5 10 1 1 180 6 1 model-name=BC547B T 44400 39800 5 10 0 0 0 0 1 model=IS=7.443e-11 BF=1343.59 NF=1.42606 VAF=80.4901 IKF=0.427163 ISE=2.4623e-10 NE=2.73946 BR=62.79 NR=1.5 VAR=1.0092 IKR=4.27163 ISC=2.4623e-10 NC=1.9119 RB=0.1 IRB=0.1 RBM=0.1 RE=0.579065 RC=3.01102 XTB=0.1 XTI=2.25359 EG=1.05 CJE=7.34106e-12 VJE=0.586136 MJE=0.33309 TF=5.7202e-10 XTF=4.45797 VTF=26.03 ITF=0.487193 CJC=4.04665e-12 VJC=0.95 MJC=0.343664 XCJC=0.799994 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 46300 39800 1 0 0 transistor-pnp.sym { T 47300 40600 5 8 0 1 0 0 1 device=PNP_TRANSISTOR T 47300 40400 5 10 1 1 0 0 1 refdes=Q500 T 47300 40700 5 8 0 1 0 0 1 footprint=TO92 T 47300 40200 5 10 1 1 180 6 1 model-name=BC557B T 46300 39800 5 10 0 1 0 0 1 model=IS=1.68077e-12 BF=3385 NF=1.2121 VAF=196.745 IKF=1.30809 ISE=1.76095e-13 NE=1.56412 BR=99.5231 NR=1.23271 VAR=0.978236 IKR=10 ISC=1.76095e-13 NC=1.21727 RB=17.2944 IRB=0.1 RBM=0.1 RE=0.354597 RC=1.77298 XTB=0.100946 XTI=1 EG=1.05 CJE=1.13417e-11 VJE=0.654776 MJE=0.23 TF=5.99604e-10 XTF=1000 VTF=3935.03 ITF=31.8969 CJC=9.54039e-12 VJC=0.4 MJC=0.408114 XCJC=0.910091 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 44300 47900 1 0 0 transistor.sym { T 45300 48700 5 8 0 0 0 0 1 device=NPN_TRANSISTOR T 45300 48500 5 10 1 1 0 0 1 refdes=Q1 T 45300 48800 5 8 0 2 0 0 1 footprint=TO92 T 45300 48400 5 10 1 1 180 6 1 model-name=BC547B T 44300 47900 5 10 0 0 0 0 1 model=IS=7.443e-11 BF=1343.59 NF=1.42606 VAF=80.4901 IKF=0.427163 ISE=2.4623e-10 NE=2.73946 BR=62.79 NR=1.5 VAR=1.0092 IKR=4.27163 ISC=2.4623e-10 NC=1.9119 RB=0.1 IRB=0.1 RBM=0.1 RE=0.579065 RC=3.01102 XTB=0.1 XTI=2.25359 EG=1.05 CJE=7.34106e-12 VJE=0.586136 MJE=0.33309 TF=5.7202e-10 XTF=4.45797 VTF=26.03 ITF=0.487193 CJC=4.04665e-12 VJC=0.95 MJC=0.343664 XCJC=0.799994 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 42300 42400 1 0 0 transistor.sym { T 43300 43200 5 8 0 0 0 0 1 device=NPN_TRANSISTOR T 43300 43000 5 10 1 1 0 0 1 refdes=Q4 T 43300 43300 5 8 0 2 0 0 1 footprint=TO92 T 43300 42900 5 10 1 1 180 6 1 model-name=BC547B T 42300 42400 5 10 0 0 0 0 1 model=IS=7.443e-11 BF=1343.59 NF=1.42606 VAF=80.4901 IKF=0.427163 ISE=2.4623e-10 NE=2.73946 BR=62.79 NR=1.5 VAR=1.0092 IKR=4.27163 ISC=2.4623e-10 NC=1.9119 RB=0.1 IRB=0.1 RBM=0.1 RE=0.579065 RC=3.01102 XTB=0.1 XTI=2.25359 EG=1.05 CJE=7.34106e-12 VJE=0.586136 MJE=0.33309 TF=5.7202e-10 XTF=4.45797 VTF=26.03 ITF=0.487193 CJC=4.04665e-12 VJC=0.95 MJC=0.343664 XCJC=0.799994 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 44300 41900 1 0 0 transistor-pnp.sym { T 45300 42700 5 8 0 1 0 0 1 device=PNP_TRANSISTOR T 45300 42500 5 10 1 1 0 0 1 refdes=Q2 T 45300 42800 5 8 0 1 0 0 1 footprint=TO92 T 45300 42300 5 10 1 1 180 6 1 model-name=BC557B T 44300 41900 5 10 0 1 0 0 1 model=IS=1.68077e-12 BF=3385 NF=1.2121 VAF=196.745 IKF=1.30809 ISE=1.76095e-13 NE=1.56412 BR=99.5231 NR=1.23271 VAR=0.978236 IKR=10 ISC=1.76095e-13 NC=1.21727 RB=17.2944 IRB=0.1 RBM=0.1 RE=0.354597 RC=1.77298 XTB=0.100946 XTI=1 EG=1.05 CJE=1.13417e-11 VJE=0.654776 MJE=0.23 TF=5.99604e-10 XTF=1000 VTF=3935.03 ITF=31.8969 CJC=9.54039e-12 VJC=0.4 MJC=0.408114 XCJC=0.910091 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 42300 47400 1 0 0 transistor-pnp.sym { T 43300 48200 5 8 0 1 0 0 1 device=PNP_TRANSISTOR T 43300 48000 5 10 1 1 0 0 1 refdes=Q3 T 43300 48300 5 8 0 1 0 0 1 footprint=TO92 T 43300 47800 5 10 1 1 180 6 1 model-name=BC557B T 42300 47400 5 10 0 1 0 0 1 model=IS=1.68077e-12 BF=3385 NF=1.2121 VAF=196.745 IKF=1.30809 ISE=1.76095e-13 NE=1.56412 BR=99.5231 NR=1.23271 VAR=0.978236 IKR=10 ISC=1.76095e-13 NC=1.21727 RB=17.2944 IRB=0.1 RBM=0.1 RE=0.354597 RC=1.77298 XTB=0.100946 XTI=1 EG=1.05 CJE=1.13417e-11 VJE=0.654776 MJE=0.23 TF=5.99604e-10 XTF=1000 VTF=3935.03 ITF=31.8969 CJC=9.54039e-12 VJC=0.4 MJC=0.408114 XCJC=0.910091 FC=0.8 CJS=0 VJS=0.75 MJS=0.5 TR=1e-07 PTF=0 KF=0 AF=1 } C 47200 46900 1 270 0 diode-1.sym { T 47800 46500 5 10 0 1 90 8 1 device=DIODE T 47200 46900 5 10 0 0 90 8 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 47200 46500 5 10 1 1 180 2 1 refdes=D5 T 47200 46300 5 10 0 1 180 2 1 model-name=1N4148 } C 47400 45800 1 0 1 diode-1.sym { T 47000 46400 5 10 0 1 0 6 1 device=DIODE T 47400 45800 5 10 0 0 0 6 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 46600 46200 5 10 1 1 180 8 1 refdes=D11 T 46800 45800 5 10 0 1 90 8 1 model-name=1N4148 } C 45800 45000 1 90 1 diode-1.sym { T 45200 44600 5 10 0 1 270 2 1 device=DIODE T 45800 45000 5 10 0 0 270 2 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 45800 44600 5 10 1 1 0 0 1 refdes=D6 T 45800 44400 5 10 0 1 0 0 1 model-name=1N4148 } C 46500 45200 1 180 0 diode-1.sym { T 46300 44700 5 10 1 1 180 8 1 refdes=D12 T 45900 45200 5 10 0 1 90 2 1 model-name=1N4148 T 46100 44600 5 10 0 1 0 8 1 device=DIODE T 46500 45200 5 10 0 0 0 8 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 } N 39800 40200 39800 41000 4 N 40300 40200 39800 40200 4 N 41700 40200 41200 40200 4 N 41200 40200 41200 41000 4 N 45100 39800 44400 39800 4 N 44400 39800 44400 41000 4 N 47000 39800 46300 39800 4 N 46300 39800 46300 41000 4 N 43400 40100 43700 40100 4 N 43700 40100 43700 41000 4 C 45600 43900 1 0 0 diode-1.sym { T 46000 44500 5 10 0 1 180 8 1 device=DIODE T 45600 43900 5 10 0 0 180 8 1 model=IS=4.352E-9 N=1.906 BV=110 IBV=0.0001 RS=0.6458 CJO=7.048E-13 VJ=0.869 M=0.03 FC=0.5 TT=3.48E-9 T 45700 44000 5 10 1 1 0 2 1 refdes=D7 T 46200 43900 5 10 0 1 270 2 1 model-name=1N4148 } C 38000 39200 1 0 0 spice-directive-1.sym { T 38100 39600 5 10 1 1 0 0 1 refdes=script T 41500 39600 5 10 1 0 0 0 1 end=50u T 40600 39600 5 10 1 0 0 0 1 slice=10n T 42500 39600 5 10 1 0 0 0 1 plots=q3in highemitter v3out lowemitter emitters T 38000 39200 5 10 0 0 0 0 1 PlotsSave=PWM Q5base LOWout I(V_IQ2)*1000 I(V_IQ4)*1000 Gate }